SMDJ11A,SMDJ11A瞬态抑制二极管,SMDJ11A二极管参数
SMDJ11A瞬态抑制二极管,SMDJ11A功率3000W,SMDJ11A丝印PDZ,11V SMC封装TVS二极管规格书参数,SMDJ11A单向TVS管
SMDJ11A瞬态抑制二极管,SMDJ11A功率3000W,SMDJ11A丝印PDZ,11V SMC封装TVS二极管规格书参数,SMDJ11A单向TVS管
SMDJ11A SMA封装参数:点击查看
SMDJ11A封装为DO-214AB/SMC
11V瞬态抑制二极管参数如下:
DEVICE MARKING CODE 丝印:PDZ
Peak Pulse Power Dissipation on 功率损耗Pppm:3000W
REVERSE STANDOFF VOLTAGE VRWM (V) 反向对峙电压:11V
BREAKDOWN VOLTAGE VBR (V) MIN. @ IT 崩溃电压(最小):12.2V
BREAKDOWN VOLTAGE VBR (V) MAX. @ IT 崩溃电压(最大):13.5V
TEST CURRENT (IT) mA 测试电流:1mA
MAXIMUM CLAMPING VOLTAGE @IPP VC (V) 最大嵌位电压:18.2V
PEAK PULSE CURRENT IPP (A) 峰值脉冲电流:164.8A
REVERSE LEAKAGE @ VRWM IR (μA) 反向漏电:2μA
Operating Junction Temperature and Storage Temperature Range 工作结温度和存储温度范围 Tj, Tstg:-65~+150℃
SMDJ11A瞬态抑制二极管,DO-214AB/SMC封装尺寸:
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